TGA2533-SM データシートの表示（PDF） - TriQuint Semiconductor

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TGA2533-SM

Ku-Band Power Amplifier

TriQuint Semiconductor 

TGA2533-SM

Ku-Band Power Amplifier

Specifications

Absolute Maximum Ratings

Parameter

Drain Voltage,Vd

Gate Voltage,Vg

Drain Current, Id

Gate Current, Ig

Power Dissipation, Pdiss

RF Input Power, CW, 50Ω,T = 25ºC

Channel Temperature, Tch

Mounting Temperature (30 Seconds)

Storage Temperature

Rating

+8 V

-3 to 0 V

2.24 A

-11 to 90 mA

17.9 W

27 dBm

200 oC

260 oC

-40 to 150 oC

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter Min

Vd

Id

Id_drive (Under RF

Drive)

Vg

Typical

6

1.3

1.7

-0.55

Max Units

V

A

A

V

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical.

Parameter

Min

Typical

Operational Frequency Range

12.5

Gain 12.7 – 13.3 GHz

24

27

14.4 – 15.4 GHz

25

27

Input Return Loss

13

Output Return Loss

13

Output Power @ Saturation

34.5

Output Power @ 1 dB Gain Compression

12.7 – 13.3 GHz

32

33

14.4 – 15.4 GHz

31

33

Output TOI @ Pout/Tone = 20 dBm

12.7 – 13.3 GHz

39.5

43

14.4 – 15.4 GHz

39.5

43

Noise Figure

7

Gain Temperature Coefficient

-0.033

Power Temperature Coefficient

-0.005

Max

15.5

Units

GHz

dB

dB

dB

dB

dBm

dBm

dBm

dBm

dBm

dB

dB/°C

dBm/°C

Data Sheet: Rev D 11/05/13

© 2013 TriQuint Semiconductor, Inc.

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Disclaimer: Subject to change without notice

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