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CS51033GDR8(2002) データシートの表示(PDF) - ON Semiconductor

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CS51033GDR8
(Rev.:2002)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CS51033GDR8 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CS51033
3.3VIN
CIN
100 µF
RC
10
D4
1N5818
C2
C3
1.0 µF 100 µF
COSC
150 pF
D2
1N4148
C1
D3
1N4148
0.1 µF
VC VGATE
RG
10
VCC
COSC
0.1 µF
VFB
100
IRF7404
4.7 µH
GND PGND CS
0.1 µF
CS
0.1 µF
C0
C4
100 µF 0.1 µF
D1
1N5821
GND
RA
1.5 k
RB
300
Note: Capacitors C2, C3, and C4, are low
ESR tantalum caps used for noise reduction.
Figure 1. Typical Application Diagram
1.5VOUT
@ 3.0 Amp
100 µF
GND
MAXIMUM RATINGS*
Rating
Power Supply Voltage, VCC
Driver Supply Voltage, VC
Driver Output Voltage, VGATE
COSC, CS, VFB (Logic Pins)
Peak Output Current
Steady State Output Current
Operating Junction Temperature, TJ
Storage Temperature Range, TS
ESD (Human Body Model)
Package Thermal Resistance:
Junction–to–Case, RθJC
Junction–to–Ambient, RθJA
Lead Temperature Soldering:
1. 60 sec. max above 183°C.
*The maximum package power dissipation must be observed.
Reflow (SMD styles only) (Note 1)
Value
5.0
20
20
5.0
1.0
200
150
–65 to 150
2.0
45
165
230 peak
Unit
V
V
V
V
A
mA
°C
°C
kV
°C/W
°C/W
°C
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