2N4906 データシートの表示（PDF） - TT Electronics.

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2N4906

SILICON EPITAXIAL PNP TRANSISTOR

TT Electronics. 

SILICON EPITAXIAL

PNP TRANSISTOR

2N4906

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)

Symbols Parameters

Test Conditions

V(BR)CEO(1)

ICEV

Collector-Emitter

Breakdown Voltage

Collector Cut-Off Current

IC = -10mA

VCE = -80V

VBE = 1.5V

TC = 150°C

ICEO

Collector Cut-Off Current

VCE = -80V

IB = 0

ICBO

Collector Cut-Off Current

VCB = -80V

IE = 0

IEBO

Emitter Cut-Off Current

VEB = -5V

IC = 0

hFE(1)

VBE(on)(1)

Forward-current transfer

ratio

Base-Emitter Voltage

IC = -2.5A

IC = -5A

IC = -2.5A

VCE = -2V

VCE = -2V

VCE = -2V

VCE(sat)(1)

Collector-Emitter Saturation

Voltage

IC = -2.5A

IC = -5A

IB = -0.25A

IB = -1.0A

DYNAMIC CHARACTERISTICS

hfe

Small-Signal Current Gain

fT

Transition Frequency

IC = -500mA

f = 1.0KHz

IC = -1.0A

f = 1.0MHz

VCE = -10V

VCE = -10V

Notes

(1) Pulse Width ≤ 300us, δ ≤ 2%

Min. Typ Max. Units

-80

V

-0.1

-2

-1.0

mA

-0.1

-1.0

25

100

7

-1.4

-1.0

V

-1.5

40

4

MHz

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8299

Website: http://www.semelab-tt.com

Issue 1

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