2N4909 データシートの表示（PDF） - New Jersey Semiconductor
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2N4909 Datasheet PDF : 2 Pages
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Cx
20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4909
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(sat)= -0.75V(Max.)@ lc= -4A
• DC Current Gain-
: hFE= 20-80 @lc= -4A
APPLICATIONS
• Designed for general purpose use in power amplifier and
switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25 C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-4
A
PC
Collector Power Dissipation@Tc=25°C
150
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
'C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rfh j-c Thermal Resistance, Junction to Case
MAX UNIT
2.0 °c/w
3
I
yr
^V
'
2
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
r-
*
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'
UI
cj:
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C
V!^^/
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H3H
nun
DIM MM MAX
A
39 )0
B 25.30 26.87
C 7-80 8.30
D 0.» 1.10
E
1.40 1.60
5
1032
H
54S
K 11.« 13.50
L 16.75 17.05
N 19.40 1962
Q 4.00 4.20
U 30.00 3020
V
430 4.50
NJ Semi-Conductors reserves the right to change test eonditions, parameter limits and package dimensionswithout
notice. Information furnished hy N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in i.ts use. "
NJ Semi-Conductors encourages customers to verify (hat datasheets are current before placiim orders.
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