2N4235 データシートの表示（PDF） - Central Semiconductor
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2N4235 Datasheet PDF : 2 Pages
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2N4234
2N4235
2N4236
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4234, 2N4235,
and 2N4236 are silicon PNP transistors mounted in a
hermetically sealed metal case, designed for power
amplifier, power driver, and switching power supply
applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
2N4234 2N4235 2N4236
40
60
80
40
60
80
7.0
1.0
3.0
0.2
6.0
1.0
-65 to +200
29
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEX
VCE=Rated VCEO, VBE=1.5V
ICEX
VCE=30V, VBE=1.5V, TC=150°C (2N4234)
ICEX
VCE=40V, VBE=1.5V, TC=150°C (2N4235)
ICEX
VCE=60V, VBE=1.5V, TC=150°C (2N4236)
ICEO
VCE=30V (2N4234)
ICEO
VCE=40V (2N4235)
ICEO
VCE=60V (2N4236)
IEBO
VEB=7.0V
BVCEO
IC=100mA (2N4234)
40
BVCEO
IC=100mA (2N4235)
60
BVCEO
IC=100mA (2N4236)
80
VCE(SAT) IC=1.0A, IB=125mA
VBE(SAT) IC=1.0A, IB=100mA
VBE(ON) VCE=1.0V, IC=250mA
MAX
100
100
1.0
1.0
1.0
1.0
1.0
1.0
500
0.6
1.5
1.0
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
UNITS
μA
μA
mA
mA
mA
mA
mA
mA
μA
V
V
V
V
V
V
R0 (22-October 2013)
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