2N5191 データシートの表示（PDF） - Continental Device India Limited

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2N5191

NPN EPITAXIAL SILICON POWER TRANSISTORS

Continental Device India Limited 

NPN EPITAXIAL SILICON POWER TRANSISTORS

2N5191

2N5192

TO126

Plastic Package

ECB

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

DC Current Gain

hFE * IC=1.5A, VCE=2V

2N5191 25

2N5192 20

IC=4A, VCE=2V

2N5191 10

2N5192 7

Transition frequency

fT

IC=1A, VCE=10V

2

*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%

TYP MAX UNIT

-

100

-

80

-

-

-

-

-

-

MHz

Continental Device India Limited

Data Sheet

Page 2 of 4

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