BCW65C データシートの表示（PDF） - Fairchild Semiconductor
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BCW65C Datasheet PDF : 4 Pages
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Typical Characteristics
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
1
10
100
500
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
0.6
25 °C
125 °C
0.4
0.2
0.1
1
10
25
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
500
100
VCB = 40V
10
1
0.1
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (°C)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
f = 1 MHz
16
12
C te
8
4
C ob
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
350
300
250
200
150
100
50
0
0
Power Dissipation vs
Ambient Temperature
SOT-23
25
50
75
100
125
150
TEMPERATURE (oC)
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