TIP135 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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TIP135

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

TIP135

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -4A

·Complement to Type TIP130

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IB

Base Current- Continuous

Collector Power Dissipation

PC

@TC=25℃

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

-0.3

A

70

W

2

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

1.785 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W

SPTECH website：www.superic-tech.com

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