PMD10K60 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
PMD10K60 Datasheet PDF : 2 Pages
| |||
Silicon NPN Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA;lB=0
vCE(sat) Collector-Emitter Saturation Voltage lc= 6A; IB= 24mA
VsE(sat) Base-Emitter Saturation Voltage
lc= 6A; IB= 24mA
VBE(OH) Base-Emitter On Voltage
ICER
Collector Cutoff current
IEBO
Emitter Cut-off current
lc= 6A; VCE= 3V
VCE= 60V; RBE= 1 K 0
VCE= 60V; RBE= 1 K Q , Tc=1 50 °C
VEB= 5V; lc= 0
hFE
DC Current Gain
lc= 6A; VCE= 3V
fr
Current-Gain—Bandwidth Product lc= 5A; VCE= 3V, f= 1kHz
COB
Output Capacitance
IE= 0; VCB= 10V; f,est= 1.0MHz
PMD10K60
MIN
MAX UNIT
60
V
2.0
V
2.8
V
2.8
V
1.0
5.0
mA
2.0
mA
1000 20000
4
MHz
300
PF
Share Link: 