Philips Semiconductors
NPN wideband cascode transistor
Product specification
BFC505
Notes
1. VB2 = VC2−E1/2 + 0.6 V
2.
MSG =
s12 ⁄ s21
×
k
–
k2
–
1
;
k = -1----+-------s---1--1----×-----s----2--2----–-----s---1--2----×-----s---2---1----2----–----------s---1---1----2----–------s---2--2-----2----
2 × s12 × s 21
3. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).
4. IC = 1 mA; VCE = 3 V; RS = 50 Ω; ZL = opt; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p−q) = 904 MHz.
600
handbook, halfpage
Ptot
(mW)
double loaded
400
single loaded
200
MBG208
handbook,1h2alfpage
fT
(GHz)
8
4
MBG209
VC2-E1 = 12 V
9V
6V
3V
0
0
50
100
150
200
Ts (oC)
Fig.2 Power derating as a function of soldering
point temperature; typical values.
0
10−1
1
10 IC (mA) 102
f = 1 GHz; Tamb = 25 °C.
Fig.3 Transition frequency as a function of
collector current; typical values.
1996 Oct 08
5