IRG4PC60FPBF(2004) データシートの表示（PDF） - International Rectifier

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IRG4PC60FPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

International Rectifier 

IRG4PC60FPbF

160

120

Square wave:

60% of rated

voltage

Triangular wave:

Ideal diodes

Clamp voltage:

80% of rated

80

For both:

Duty cycle : 50%

40

Tj = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 73W

0

0.1

1

10

100

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

100

TJ = 150°C

10

1

0.1

0.01

0.0

TJ = 25°C

1.0

2.0

VGE = 15V

20µs PULSE WIDTH

3.0

4.0

5.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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1000

100

TJ = 150°C

10

1

0.1

0.01

4

TJ = 25°C

VCC = 10V

5µs PULSE WIDTH

5 6 7 8 9 10 11

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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