IRLR024NTRPBF データシートの表示（PDF） - Unspecified

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IRLR024NTRPBF

N-Channel 60 V (D-S) MOSFET

Unspecified 

IRLR024NTRPBF

N-Channel 60 V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

60

RDS(on) () Max.

0.073 at VGS = 10 V

0.085 at VGS = 4.5 V

TO-252

ID (A)

18.2

13.2

Qg (Typ.)

19.8

G

D

S

Drain Connected to Tab

FEATURES

• TrenchFET® Power MOSFET

• 100 % Rg and UIS Tested

• Material categorization:

For definitions of compliance please see

APPLICATIONS

• DC/DC Converters

• DC/AC Inverters

• Motor Drives

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (t = 300 µs)

Avalanche Current

Single Avalanche Energya

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TC = 25 °C

TC = 70 °C

L = 0.1 mH

TC = 25 °C

TA = 25 °Cc

VDS

60

V

VGS

± 20

16.9

ID

13.6

A

IDM

25

IAS

15

EAS

11.25

mJ

41.7b

PD

2.1

W

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient (PCB Mount)c

Junction-to-Case (Drain)

Notes:

a. Duty cycle  1 %.

b. See SOA curve for voltage derating.

c. When mounted on 1" square PCB (FR-4 material).

d. Base on TC = 25 °C.

Symbol

RthJA

RthJC

Limit

60

3

Unit

°C/W

E-mail：China@VBsemi TEL:86-755-83251052

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