2SD909 データシートの表示（PDF） - Inchange Semiconductor

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2SD909

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD909

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA; IC= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 10A; IB= 1A

ICBO

Collector Cutoff Current

VCB= 150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 2A; VCE= 5V

hFE

DC Current Gain

IC= 5A; VCE= 5V

MIN TYP. MAX UNIT

80

V

150

V

7

V

1.5 V

3.0 V

2.0 V

4.0 V

0.1 mA

0.1 mA

60

200

40

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