MMBT6517LT3G データシートの表示（PDF） - ON Semiconductor
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MMBT6517LT3G Datasheet PDF : 5 Pages
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MMBT6517L, NSVMMBT6517L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mA)
Collector −Base Breakdown Voltage
(IC = 100 mA)
Emitter −Base Breakdown Voltage
(IE = 10 mA)
Collector Cutoff Current
(VCB = 250 V)
Emitter Cutoff Current
(VEB = 5.0 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 30 mA, VCE = 10 V)
(IC = 50 mA, VCE = 10 V)
(IC = 100 mA, VCE = 10 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
(IC = 50 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
Base −Emitter On Voltage
(IC = 100 mA, VCE = 10 V)
SMALL− SIGNAL CHARACTERISTICS
Current Gain − Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 20 MHz)
Collector−Base Capacitance
(VCB = 20 V, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 V, f = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
Min
Max
Unit
V(BR)CEO
V
350
−
V(BR)CBO
V
350
−
V(BR)EBO
V
6.0
−
ICBO
nA
−
50
IEBO
nA
−
50
hFE
VCE(sat)
VBE(sat)
VBE(on)
−
20
−
30
−
30
200
20
200
15
−
V
−
0.30
−
0.35
−
0.50
−
1.0
V
−
0.75
−
0.85
−
0.90
V
−
2.0
fT
MHz
40
200
Ccb
pF
−
6.0
Ceb
pF
−
80
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