IRFP054N データシートの表示（PDF） - Kersemi Electronic Co., Ltd.
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IRFP054N Datasheet PDF : 8 Pages
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IRFP054N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.012 Ω VGS = 10V, ID = 43A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
30 ––– ––– S VDS = 25V, ID = 43A
––– ––– 25
––– ––– 250
µA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 130
ID = 43A
––– ––– 23 nC VDS = 44V
––– ––– 53
VGS = 10V, See Fig. 6 and 13
––– 11 –––
VDD = 28V
––– 66 ––– ns ID = 43A
––– 40 –––
RG = 3.6Ω
––– 46 –––
RD = 0.62Ω, See Fig. 10
Between lead,
D
––– 5.0 –––
6mm (0.25in.)
nH
from package
G
––– 13 –––
and center of die contact
S
––– 2900 –––
VGS = 0V
––– 880 ––– pF VDS = 25V
––– 330 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 81 A showing the
integral reverse
G
––– ––– 290
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
––– 81 120 ns TJ = 25°C, IF = 43A
––– 240 370 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25Ω, IAS = 43A. (See Figure 12)
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF1010N data and test conditions
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2014-8-14
2
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