BFP520 データシートの表示（PDF） - Infineon Technologies

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BFP520

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFP520

Thermal Resistance

Parameter

Junction - soldering point1)

Symbol

RthJS

Value

Unit

450

K/W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 2 V, VBE = 0

VCE = 10 V, VBE = 0

Collector-base cutoff current

VCB = 2 V, IE = 0

Emitter-base cutoff current

VEB = 0.5 V, IC = 0

DC current gain

IC = 20 mA, VCE = 2 V, pulse measured

V(BR)CEO 2.5

3

3.5 V

ICES

ICBO

nA

-

1

30

-

- 1000

-

-

30

IEBO

- 100 3000

hFE

70 110 170 -

1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

2

2015-10-12

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