Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF996S
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
IG1−SS
IG2−SS
V(BR)G1-SS
V(BR)G2-SS
IDSS
V(P)G1-S
V(P)G2-S
gate cut-off current
gate cut-off current
gate-source breakdown voltage
gate-source breakdown voltage
drain current
gate-source cut-off current
gate-source cut-off current
CONDITIONS
VG1-S = ±5 V; VG2-S = VDS = 0
VG2-S = ±5 V; VG1-S = VDS = 0
IG1-S = ±10 mA; VG2-S = VDS = 0
IG2-S = ±10 mA; VG1-S = VDS = 0
VDS = 15 V; VG1-S = 0; VG2-S = 4 V
ID = 20 µA; VDS = 15 V; VG2-S = 4 V
ID = 20 µA; VDS = 15 V; VG1-S = 0
MIN.
−
−
±6
±6
4
−
−
MAX. UNIT
±50 nA
±50 nA
±20 V
±20 V
20
mA
−2.5 V
−2
V
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 10 mA; VDS = 15 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Yfs
Cig1-s
Cig2-s
Crs
Cos
F
GP
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
f = 1 kHz
15
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 200 MHz; GS = 2 mS; BS = BSopt −
f = 800 MHz; GS = 3.3 mS; BS = BSopt −
f = 200 MHz; GS = 2 mS; BS = BSopt; −
GL = 0.5 mS; BL = BLopt
f = 800 MHz; GS = 3.3 mS;
−
BS = BSopt; GL = 1 mS; BL = BLopt
18
−
mS
2.3 2.6 pF
1.2 −
pF
25
−
fF
0.8 −
pF
1
−
dB
1.8 −
dB
25
−
dB
18
−
dB
April 1991
4