MPSW13_ データシートの表示（PDF） - ON Semiconductor
部品番号
コンポーネント説明
メーカー
MPSW13_ Datasheet PDF : 3 Pages
| |||
ON Semiconductort
One Watt Darlington
Transistors
NPN Silicon
MPSW13
MPSW14
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCES
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
30
30
10
1.0
1.0
8.0
2.5
20
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Symbol
Max
RqJA
125
RqJC
50
Unit
°C/W
°C/W
1
23
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR 3
BASE
2
EMITTER 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
Symbol
Min
V(BR)CES
30
ICBO
—
IEBO
—
Max
Unit
—
Vdc
100
nAdc
100
nAdc
Semiconductor Components Industries, LLC, 2001
November, 2001 − Rev. 3
1324
Publication Order Number:
MPSW13/D
Share Link: 