MTW45N10E データシートの表示（PDF） - Motorola => Freescale

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MTW45N10E

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole

Motorola => Freescale 

MTW45N10E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

100

—

—

116

—

Vdc

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)

(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

Vdc

2.0

—

4.0

—

7.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 22.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 45 Adc)

(ID = 22.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 10 Vdc, ID = 22.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD= 50 Vdc, ID = 45 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 80 Vdc, ID = 45 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 45 Adc, VGS = 0 Vdc)

(IS = 45 Adc, VGS = 0 Vdc, TJ = 125°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.027 0.035 Ohm

Vdc

—

1.13

2.16

—

—

1.53

12

—

—

mhos

—

3480

5000

pF

—

1240

2000

—

315

650

—

25

50

ns

—

234

470

—

83

170

—

116

240

—

106

220

nC

—

26

—

—

54

—

—

44

—

Vdc

—

1.09

1.635

—

1.04

—

Reverse Recovery Time

(See Figure 14)

(IS = 45 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

166

—

ns

—

118

—

—

48

—

—

1.1

—

µC

—

4.5

—

nH

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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