MTW7N80E データシートの表示（PDF） - ON Semiconductor
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MTW7N80E Datasheet PDF : 8 Pages
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MTW7N80E
TYPICAL ELECTRICAL CHARACTERISTICS
14
TJ = 25°C
12
10
8
VGS = 10 V
7V
6V
6
4
2
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
14
VDS ≥ 10 V
12
10
100°C
8
6
25°C
4
2
TJ = −55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.0
1.8
VGS = 10 V
TJ = 100°C
1.6
1.4
1.2
1.0
25°C
0.8
0.6
− 55°C
0.4
0.2
0
2
4
6
8
10
12
14
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
1.08
TJ = 25°C
1.04
1.00
0.96
0.92
VGS = 10 V
0.88
15 V
0.84
0.80
0
2
4
6
8
10
12
14
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.4
VGS = 10 V
2.0
ID = 3.5 A
1.6
1.2
0.8
0.4
100000
10000
VGS = 0 V
1000
100
10
TJ = 125°C
100°C
25°C
0
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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