MMDF2C02E データシートの表示（PDF） - ON Semiconductor
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MMDF2C02E Datasheet PDF : 10 Pages
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MMDF2C02E
ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6)
Characteristic
Symbol Polarity
Min
SWITCHING CHARACTERISTICS − continued (Note 8)
Total Gate Charge
QT
(N)
−
(P)
−
Gate−Source Charge
Q1
(N)
−
(VDS = 16 Vdc, ID = 2.0 Adc,
(P)
−
Gate−Drain Charge
VGS = 10 Vdc)
Q2
(N)
−
(P)
−
Q3
(N)
−
(P)
−
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 7) (IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
−
(IS = 2.0 Adc, VGS = 0 Vdc)
(P)
−
Reverse Recovery Time
see Figure 7
trr
(N)
−
(P)
−
(IF = IS,
dIS/dt = 100 A/ms)
ta
(N)
−
(P)
−
tb
(N)
−
(P)
−
QRR
(N)
−
(P)
−
6. Negative signs for P−Channel device omitted for clarity.
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
8. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
Typ
10.6
10
1.3
1.0
2.9
3.5
2.7
3.0
1.0
1.5
34
32
17
19
17
12
0.025
0.035
Max
Unit
30
nC
15
−
−
−
−
−
−
1.4
Vdc
2.0
66
ns
64
−
−
−
−
−
mC
−
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