MMFT107T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 130 V, VGS = 0)
Gate–Body Leakage Current — Reverse
(VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mA)
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 200 mA)
Forward Transconductance
(VDS = 25 V, ID = 250 mA)
V(BR)DSS
200
—
IDSS
—
—
IGSS
—
—
—
Vdc
30
nAdc
10
nAdc
VGS(th)
1.0
—
3.0
Vdc
RDS(on)
—
—
14
Ohms
VDS(on)
—
—
2.8
Vdc
gfs
—
300
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
—
60
—
pF
—
30
—
—
6.0
—
SOURCE DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
Continuous Source Current, Body
Diode
Pulsed Source Current, Body Diode
(VGS = 0,
IS = 250 mA)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
VF
—
0.8
—
V
IS
—
—
250
mA
ISM
—
—
500
2.5
TJ = 25°C
2
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
500
VDS = 10 V
400
1.5
6V 5V
4V
1
3V
0.5
0
0
2
4
6
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
300
200
100
TJ = 125°C
25°C
– 55°C
0
0
1
2
3
4
5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data