BCX5616QTA データシートの表示（PDF） - Diodes Incorporated.

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BCX5616QTA

80V NPN MEDIUM POWER TRANSISTORS IN SOT89

Diodes Incorporated. 

BCX5616Q

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 11)

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Static Forward Current Transfer Ratio (Note 11)

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

VBE(on)

Min

Typ

100

—

80

—

6

—

—

—

—

—

—

—

25

—

100

—

25

—

—

—

—

—

Transition Frequency

fT

150

—

Output Capacitance

Cobo

—

—

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0.8

250

Max

—

—

—

0.1

20

20

-

250

-

0.5

1.0

-

25

Unit

V

V

V

µA

nA

—

V

V

MHz

pF

Test Condition

IC = 100µA

IC = 10mA

IE = 100µA

VCB = 30V

VCB = 30V, TA = +150°C

VEB = 5V

IC = 5mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 500mA, VCE = 2V

IC = 500mA, IB = 50mA

IC = 500mA, VCE = 2V

IC = 50mA, VCE = 10V

f = 100MHz

VCB = 10V, f = 1MHz

200

0.6

150

0.4

100

0.2

50

0

0

1

2

3

4

5

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

1.2

1.0

0.8

0

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current

0.4

0.3

0.6

0.2

0.4

0.1

0.2

0

0.0001 0.001 0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Fig. 3 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.0001 0.001 0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

BCX5616Q

Datasheet Number: DS37024 Rev. 2 – 2

4 of 7

www.diodes.com

May 2015

© Diodes Incorporated

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