NXP Semiconductors
Silicon N-channel dual gate MOS-FET
Product specification
BF992
102
handbook, halfpage
yis
(mS)
10
1
10−1
10−2
10
MGE794
bis
gis
102
f (MHz)
103
handbook,1h0alfpage
yos
(mS)
1
10−1
10−2
10
MGE793
bos
gos
102
f (MHz)
103
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.7 Input admittance as a function of frequency;
typical values.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.8 Output admittance as a function of
frequency; typical values.
handbook,2h5alfpage
Yfs
(mS)
20
15
10
5
0
10
MGE795
gfs
−bfs
102
f (MHz)
103
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.9 Forward transfer admittance as a function
of frequency; typical values.
handboo1k,2h0alfpage
yrs
(µS)
80
40
0
10
MGE796
−brs
grs
102
103
f (MHz)
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.10 Reverse transfer admittance as a function
of frequency; typical values.
Rev. 04 - 21 November 2007
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