MBR30H90PT-E3/4W(2020) データシートの表示（PDF） - Vishay Semiconductors
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MBR30H90PT-E3/4W Datasheet PDF : 4 Pages
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www.vishay.com
MBR30H90PT, MBR30H100PT
Vishay General Semiconductor
10 000
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics Per Diode
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
1000
Fig. 4 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.245 (6.2)
0.225 (5.7)
0.840 (21.3)
0.820 (20.8)
TO-3P (TO-247AD)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
1
2
3
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 3
PIN 2
CASE
0.078 (1.98) REF.
10
1° REF.
Both Sides
Revision: 27-May-2020
3
Document Number: 88678
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