PVB42004X データシートの表示（PDF） - Philips Electronics
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PVB42004X Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
PVB42004X
FEATURES
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Local thick oxide and gold sandwich metallization
realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
• Intended for use in common base class-B power
amplifiers up to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT445A) with the common base connected to the
flange.
PINNING - SOT445A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
handbook, halfpage
3
Top view
1
3
2
c
b
e
MAM251
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class-B test circuit.
MODE OF
f
VCC
PL
OPERATION
(GHz)
(V)
(W)
Gp
ηC
(dB)
(%)
1
2
Class-B (CW)
3
4
24
typ. 13
typ. 11
typ. 60
24
typ. 10
typ. 10
typ. 48
24
typ. 7.5
typ. 8.8
typ. 30
24
typ. 4
typ. 6
typ. 25
Zi
(Ω)
2.3 + j2.8
1.4 + j9.5
4.2 + j21
38 − j32
ZL
(Ω)
7.8 + j11.6
3.9 + j2.6
2.3 − j2.5
1.9 − j8.5
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
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