PVB42004X データシートの表示（PDF） - Philips Electronics
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PVB42004X Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
PVB42004X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base Tj = 75 °C
thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
MAX.
6.5
0.7
UNIT
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
V(BR)CES
ICBO
IEBO
Ccb
collector-emitter breakdown
voltage
collector cut-off current
emitter cut-off current
collector-base capacitance
Cce
collector-emitter capacitance
Ceb
emitter-base capacitance
CONDITIONS
IC = 30 mA; RBE = 0
MIN.
40
TYP.
−
MAX. UNIT
−
V
VCB = 24 V; IE = 0
−
VEB = 1.5 V; IC = 0
−
VCB = 24 V; VEB = 1.5 V; −
IE = IC = 0; f = 1 MHz
VCB = 24 V; VEB = 1.5 V; −
IE = IC = 0; f = 1 MHz
VCB = 24 V; VEB = 1 V; −
IE = IC = 0; f = 1 MHz
−
50
mA
−
1.5
mA
50
−
pF
1.2
−
pF
30
−
pF
handbook,1h6alfpage
PL
(W)
12
MGD978
8
4
0
1
2
3
4 f (GHz) 5
16
handbook, halfpage
Gp
(dB)
12
Gp
8
ηC
4
0
1
2
3
MGD979
80
ηC
(%)
60
40
20
0
4 f (GHz) 5
VCC = 24 V; PS = 1 W.
Fig.3 Load power as a function of frequency.
VCC = 24 V; PS = 1 W.
Fig.4 Power gain and efficiency as functions of
frequency.
1997 Feb 19
4
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