ISC1862 データシートの表示（PDF） - Inchange Semiconductor

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ISC1862

Silicon NPN RF Transistor

Inchange Semiconductor 

isc Silicon NPN RF Transistor

INCHANGE Semiconductor

ISC1862

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

V(BR)CBO Collector-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter-Base Cutoff Current

hFE

DC Current Gain

fT

Current-Gain—Bandwidth Product

Cre

Output feedback capacitance

| S21e |2 Power gain

NF

Noise factor

CONDITIONS

IC= 1uA ; IE= 0

VCB= 10V; IE= 0

VEB= 1V; IE= 0

IC= 10mA ; VCE= 6V

VCE=10V,IC=20mA

VCB=10V,IE=0mA,f=1MHz

VCE=10V,IC=20mA,f=1GHz

VCE=10V,IC=7mA,f=1GHz

MIN TYP. MAX UNIT

20

V

0.1 μA

0.1 μA

90

250

5

7

GHz

0.65

pF

11

dB

1.5

dB

 hFE Classifications

step

B

C

D

label

R24

R25

hFE

90-140 130-180 170-250

isc website：www.iscsemi.com

2 isc & iscsemi is registered trademar

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