1PS75SB45 データシートの表示（PDF） - Philips Electronics
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1PS75SB45 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier double diode
Product specification
1PS75SB45
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
continuous forward voltage
IR
continuous reverse current
τ
charge carrier life time
Cd
diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
MAX.
UNIT
see Fig.2
IF = 1 mA
380
mV
IF = 10 mA
500
mV
IF = 40 mA
1
V
VR = 30 V; note 1; see Fig.3
1
µA
VR = 40 V; note 1; see Fig.3
10
µA
IF = 5 mA; Krakauer method
100
ps
VR = 0 ; f = 1 MHz; see Fig.5 5
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC75 standard mounting conditions.
VALUE
833
UNIT
K/W
1999 Apr 26
3
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