PN4356 データシートの表示（PDF） - Fairchild Semiconductor

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PN4356

PNP General Purpose Amplifier

Fairchild Semiconductor 

PNP General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 mA, IB = 0

IC = 10 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 50 V, IE = 0

VCB = 50 V, IE = 0, TA = 75 °C

VEB = 5.0 V, IC = 0

VEB = 4.0 V, IC = 0

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCE = 10 V, IC = 100 µA

VCE = 10 V, IC = 1.0 mA

VCE = 10 V, IC = 10 mA

VCE = 10 V, IC = 100 mA

VCE = 10 V, IC = 500 mA

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

SMALL SIGNAL CHARACTERISTICS

Cob

Output Capacitance

Cib

Input Capacitance

hfe

Small-Signal Current Gain

NF

Noise Figure

VCB = 10 V, f = 1.0 MHz

VEB = 0.5 V, f = 1.0 MHz

IC = 50 mA, VCE = 10 V,

f = 100 MHz

VCE = 10 V, IC = 100 µA,

RS = 1.0 kΩ, f = 1.0 kHz,

BW = 1.0 Hz

SWITCHING CHARACTERISTICS

ton

Turn-on Time

toff

Turn-off Time

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCC = 30 V, IC = 500 mA,

IB1 = IB2 = 50 mA

80

V

80

V

5.0

V

50

nA

5.0

µA

10

µA

100

nA

25

40

50

250

40

30

0.15

V

0.50

V

0.90

V

1.10

V

30

pF

110

pF

1.0

5.0

3.0

dB

100

ns

400

ns

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