SIHFBC30STRL-GE3 データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
SIHFBC30STRL-GE3 Datasheet PDF : 11 Pages
| |||
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
Maximum Junction-to-Case (Drain)
RthJC
-
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
For recommended footprint and soldering techniques refer to application note #AN-994.
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.2 Ab
VDS = 50 V, ID = 2.2 Ac
600
-
-
V
-
0.62
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
μA
-
-
500
-
-
2.2
2.5
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5c
-
-
VGS = 10 V
ID = 3.6 A, VDS = 360 V,
see fig. 6 and 13b, c
-
-
-
VDD = 300 V, ID = 3.6 A,
-
Rg = 12 , RD = 82 , see fig. 10b, c
-
-
Between lead, and center of die contcat
-
660
-
86
-
pF
19
-
-
31
-
4.6
nC
-
17
11
-
13
-
ns
35
-
14
-
7.5
-
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
3.6
A
-
-
14
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb
-
-
1.6
V
trr
-
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb, c
370
810
ns
Qrr
-
2.0
4.2
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC30, SiHFBC30 data and test conditions.
www.vishay.com
2
Document Number: 91111
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 