Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
CEP60N10
Features:
1) VDS=100V,ID=50A,RDS(ON)<22mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
GDS
Absolute Maximum Ratings:(TC=25℃ unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain Current- TC=25℃
ID
Continuous Drain Current-TC=100℃
IDM
IAR
EAS
PD
TJ, TSTG
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Junction Temperature Range
Ratings
100
±20
50
30
200
15
170
160
-55-+150
Thermal Characteristics:
Symbol
Parameter
Max
RƟJA
Junction to Ambient
40
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Units
V
V
A
A
mJ
W
℃
Units
℃/W