CEPF640 データシートの表示（PDF） - Unspecified
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CEPF640 Datasheet PDF : 5 Pages
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CEPF640
Electrical Characteristics：(TA=25℃ unless otherwise noted)
Symbol
Off Characteristics
BVDSS
IDSS
IGSS
On Characteristics
VGS(th)
Parameter
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
GATE-Source Threshold Voltage
RRDS(ON)
Drain-Source On Resistance
Dynamic Characteristics
Rg
Gate resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain “Miller” Charge
Drain-Source Diode Characteristics
Conditions
Min Typ Max Units
VGS=0V,ID=250μA
VGS=0V, VDS=200V
VGS=±20V, VDS=0A
200
---
---
V
---
---
1
μA
---
--- ±100 nA
VGS=VDS, ID=250μA
VGS=10V,ID=1A
VGS=4.5 V,ID=1A
1
---
3
V
---
120 165 mΩ
---
150
180
mΩ
VDS=0V, VGS=0V, f=1MHz
---
6.5
----
Ω
---
800
---
VDS=25V, VGS=0V, f=1MHz
---
100
---
pF
---
60
---
VGS=10V ,VDS=100V,
RL=5.5Ω,RGEN=3Ω
VGS=10V, VDS=100V,
ID=18A
---
8
---
ns
---
10
---
ns
---
30
---
ns
---
4
---
ns
---
27
40
nC
---
7
---
nC
---
3
---
nC
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