P0420AI データシートの表示（PDF） - Unspecified
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P0420AI Datasheet PDF : 6 Pages
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P0420AI / P0420AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
200V
0.7Ω @VGS = 10V
4A
TO-251
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1 , 2
Avalanche Current
Avalanche Energy
Power Dissipation
VDS
200
VGS
±20
TC = 25 °C
4
TC = 100 °C
ID
3
IDM
16
IAS
4
L = 10mH
EAS
75
TC = 25 °C
69
TC = 100 °C
PD
27
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.8
°C / W
Ver 1.1
1
2013-3-13
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