IRFP22N60K データシートの表示（PDF） - Vishay Semiconductors
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IRFP22N60K Datasheet PDF : 11 Pages
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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
150
45
76
Single
0.24
D
TO-247AC
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Hard Switching Primary or PFS Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
TO-247AC
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
SiHFP22N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Repetitive Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD 22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
22
14
88
2.9
380
22
37
370
15
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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