SI4559EY(1998) データシートの表示（PDF） - Vishay Semiconductors
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SI4559EY Datasheet PDF : 6 Pages
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Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
VGS = 10 thru 5 V
24
24
4V
18
18
NĆCHANNEL
Transfer Characteristics
TC = –55_C
25_C
150_C
12
12
6
0
0
0.150
2, 1 V
3V
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
0.025
VGS = 4.5 V
VGS = 10 V
0
0
6
12
18
24
30
ID – Drain Current (A)
10
VDS = 30 V
ID = 4.5 A
8
Gate Charge
6
4
2
0
0
4
8
12
16
20
Qg – Total Gate Charge (nC)
6
0
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
1400
Capacitance
1200
1000
Ciss
800
600
400
Coss
200
Crss
0
0
12
24
36
48
60
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.2
VGS = 10 V
1.9
ID = 4.5 A
1.6
1.3
1.0
0.7
0.4
–50 –25
0 25 50 75 100 125 150 175
TJ – Junction Temperature (_C)
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
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