SI4405DY-T1(2003) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
SI4405DY-T1 Datasheet PDF : 5 Pages
| |||
Si4405DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = - 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V, TJ = 70_C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 17 A
VDS = - 15 V, ID = - 17 A
IS = - 2.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 10 V, ID = - 17 A
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = - 2.9 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 1.0
- 3.0
V
"100
nA
-1
mA
- 10
- 30
A
0.006
0.0075
W
47
S
- 0.75
- 1.1
V
105
160
17.5
nC
29.5
3
4
6.5
W
25
40
15
25
190
285
ns
80
120
70
110
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
VGS = 10 thru 5 V
50
40
4V
30
20
10
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
60
50
40
30
20
TC = 125_C
10
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
Share Link: 