SI4405DY-T1(2003) データシートの表示（PDF） - Vishay Semiconductors
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SI4405DY-T1 Datasheet PDF : 5 Pages
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Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
7000
Capacitance
0.008
0.006
VGS = 10 V
5600
Ciss
4200
0.004
0.002
0.000
0
10
20
30
40
50
ID - Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 17 A
8
6
4
2
2800
1400
Crss
Coss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 17 A
1.4
1.2
1.0
0
0
22
44
66
88
110
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
0.8
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
TJ = 150_C
10
0.020
ID = 17 A
1
TJ = 25_C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Document Number: 71913
S-31726—Rev. D, 18-Aug-03
0.010
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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