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SI4405DY-T1(2003) データシートの表示(PDF) - Vishay Semiconductors

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SI4405DY-T1
(Rev.:2003)
Vishay
Vishay Semiconductors Vishay
SI4405DY-T1 Datasheet PDF : 5 Pages
1 2 3 4 5
Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
60
0.2
ID = 250 mA
50
Single Pulse Power
- 0.0
40
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10 - 2
10 - 1
Safe Operating Area, Junction-to-Case
100
1 ms
Limited
by rDS(on)
10
10 ms
1
10
Time (sec)
100 600
1
0.1
TC = 25_C
Single Pulse
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71913
S-31726—Rev. D, 18-Aug-03

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