DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BR24T16FJ-WZE2 データシートの表示(PDF) - ROHM Semiconductor

部品番号
コンポーネント説明
メーカー
BR24T16FJ-WZE2 Datasheet PDF : 41 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
BR24T16-W
Datasheet
Write Command
1. Write Cycle
(1) Arbitrary data can be written to this EEPROM. When writing only 1 byte, Byte Write is normally used, and when writing
continuous data of 2 bytes or more, simultaneous write is possible by Page Write cycle. The maximum number of bytes
is specified per device of each capacity. Up to 8 arbitrary bytes can be written.
SDA
LINE
S
W
T
R
A
I
R
SLAVE T
T
ADDRESS E
1 0 1 0 P2 P1 P0
WA
7
RA
/C
WK
WORD
ADDRESS
WA
0
D7
A
C
K
S
T
DATA
O
P
D0
A
C
K
Figure 35. Byte Write Cycle
SDA
LINE
S
W
T
R
A
I
R
SLAVE
T
T
ADDRESS
E
WORD
ADDRESS(n)
DATA(n)
1 0 1 0 P2 P1 P0
WA
7
RA
/C
WK
WA
0
D7
A
C
K
Figure 36. Page Write Cycle
D0
A
C
K
S
T
O
DATA(n+15)
P
D0
A
C
K
(2) During internal write execution, all input commands are ignored, therefore ACK is not returned.
(3) Data is written to the address designated by word address (n-th address)
(4) By issuing stop bit after 8bit data input, internal write to memory cell starts.
(5) When internal write is started, command is not accepted for tWR (5ms at maximum).
(6) Using page write cycle, writing in bulk is done as follows: When data of more than 16 bytes is sent, the bytes in excess
overwrite the data already sent first.
(Refer to "Internal Address Increment")
(7) As for page write cycle of BR24T16-W, where 2 or more bytes of data is intended to be written, after the page select
bits ‘P0’, ‘P1’, and ‘P2’ of slave address are designated arbitrarily, only the value of 4 least significant bits in the address
is incremented internally, so that data up to 16 bytes of memory only can be written.
In the case BR24T16-W, 1 page=16bytes, but the page write cycle time is 5ms at maximum for 16byte bulk write.
It does not stand 5ms at maximum x 16byte=80ms(Max)
2. Internal Address Increment
Page write mode (in the case of BR24T16-W)
WA7
WA4 WA3 WA2 WA1 WA0
0
00000
0
00001
Increment
0
00010
0Eh 0
0
0
01110
01111
00000
Significant bit is fixed.
No digit up
For example, when it is started from address 0Eh,
then, increment is made as below,
0Eh0Fh00h01h···. Please take note.
*0Eh···0E in hexadecimal, therefore, 00001110 is a
binary number.
3. Write Protect (WP) Terminal
Write Protect (WP) Function
When WP terminal is set at Vcc (H level), data rewrite of all addresses is prohibited. When it is set at GND (L level), data
rewrite of all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do not
leave it open.
In case of using it as ROM, it is recommended to connect it to pull up or Vcc.
At extremely low voltage at power ON / OFF, by setting the WP terminal 'H', write error can be prevented.
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
14/36
TSZ02201-0R2R0G100110-1-2
24.Dec.2020 Rev.008

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]