MBF110 データシートの表示（PDF） - Fujitsu

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MBF110

Solid-State Fingerprint Sensor

Fujitsu 

Solid-State Fingerprint Sensor

Row Capture and A/D Conversion Timing

F2

F1

0

0

0

1

1

0

1

1

XTAL Input Range

10-15 MHz

15-20 MHz

20-30 MHz

30-40 MHz

Row Capture Time in OSC Clock Periods

18+n

24+n

36+n

48+n

NOTE: n is selected by bits T[6:0] of DTR.

A/D Conversion Time in OSC Clock Periods

13

15

23

30

A/D Converter

Specifications*

The integrated 8-bit flash A/D converter is a buffered device. Each *All specifications in this document are preliminary and subject to

write to CAL causes: 1) the result of the previous conversion to be change.

latched and made readable at CAL, and 2) the A/D converter to start

digitizing its current input. Consequently, it takes 301 writes to

CAL in order to digitize the 300 cells of a row.

Operating Range

Absolute Maximum Ratings

• Storage Temperature:

-65° to +150° C

inary • DCVoltageApplied to any Pins: -0.5V to +7.0V

Symbol

VDD

m VDDA

eli fOSC

Parameter

Digital Supply Voltage

Analog Supply Voltage

Standard Temperature Range

Oscillator Frequency VDD = 5.0V

VDD = 3.0V

Pr DC Electrical Characteristics

Min

+3.0

+3.0

0

10

10

Max

+5.5

+5.5

60

40

20

Unit

V

V

°C

MHz

MHz

Symbol

Parameter

Test Conditions

Min

Max

Unit

VOH

Output High Voltage

VDD = 4.5V, IOH = -4 mA

2.4

–

V

VOL

Output Low Voltage

VDD = 4.5V, IOL = 8 mA

–

0.4

V

VOH

Output High Voltage

VDD = 3.0V, IOH = -2 mA

2.4

-

V

VOL

Output Low Voltage

VDD = 3.0V, IOL = 4 mA

–

0.4

V

VIH

Input High Voltage

2.0

VDD

V

VIL

Input Low Voltage

VDD = 4.5V

-0.5

0.8

V

VIL

Input Low Voltage

VDD = 3.00

-0.5

0.6

V

ILI

Input Leakage Current

GND ≤ Vin ≤ 5.5V

-5.0

5.0

µA

ILO

Output Leakage Current

GND ≤ Vout ≤ 5.5V

-5.0

5.0

µA

8 Fujitsu Microelectronics, Inc.

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