ACE3401BBMH データシートの表示（PDF） - ACE Technology Co., LTD.
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ACE3401BBMH Datasheet PDF : 6 Pages
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ACE3401B
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE3401B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general
applications.
Features
VDS(V)=-30V, ID=-4A
RDS(ON)<43mΩ @ VGS=-10V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
TA=25 OC
TA=70 OC
VDSS
VGSS
ID
-30 V
±12 V
-4
A
-3.5
Drain Current (Pulse)
IDM
-30 A
Power Dissipation
TA=25 OC
PD
1.4 W
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-3L
3
1
2
SOT-23-3L Description
1
Gate
2
Source
3
Drain
Ordering information
D
G
S
ACE3401B XX + H
Halogen - free
Pb - free
BM : SOT-23-3L
VER 1.2 1
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