ACE3401ABMH データシートの表示（PDF） - ACE Technology Co., LTD.
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ACE3401ABMH Datasheet PDF : 6 Pages
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ACE3401A
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
applications. Standard product ACE3401A is Pb-free (meets ROHS & Sony 259 specifications).
Features
• VDS (V) = -30V
• ID = -4.0 A (VGS = -10V)
• RDS(ON) < 50mΩ (VGS = -10V)
• R DS(ON)< 65mΩ (VGS = -4.5V)
• R DS(ON)< 120mΩ (VGS = -2.5V)
Absolute Maximum Ratings ( TA=25℃, unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain CurrentNOTEA
TA=25 ℃
TA=70 ℃
ID
Pulsed Drain CurrentNOTEB
IDM
Power DissipationNOTEA
TA=25 ℃
TA=70 ℃
PD
Junction and Storage Temperature Range
TJ, TSTG
Packaging Type
SOT-23
Maximum
-30
±12
-4.0
-3.5
-25
1.4
1
-55 to 150
Units
V
V
A
W
℃
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
3401
ACE3401A
SOT-23
Ø180mm
ACE3401A XX + H
Halogen - free
Pb - free
BM : SOT-23
Tape width
8mm
Quantity
3000 units
VER 1.1 1
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