ACE4606TBFMH データシートの表示（PDF） - ACE Technology Co., LTD.

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ACE4606TBFMH

30V Complementary Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD. 

ACE4606TB

30V Complementary Enhancement Mode Field Effect Transistor

Description

The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low

gate charge. The complementary MOSFETs may be used in inverter and other applications.

Features

N-channel

 VDS=30V

 ID=7A

 RDS(ON) < 26mΩ (VGS=10V)

 RDS(ON) < 45mΩ (VGS=4.5V)

P-channel

 VDS=-30V

 ID=-4A

 RDS(ON) < 58mΩ (VGS=-10V)

 RDS(ON) < 80mΩ (VGS=-4.5V)

Absolute Maximum Ratings

Parameter

Symbol N-channel P-channel Unit

Drain-Source Voltage

VDSS

30

-30

V

Gate-Source Voltage

VGSS

±20

±20

V

Drain Current (Continuous)*AC

TA=25°C

ID

7

TA=70°C

6

Drain Current (Pulse) *B

IDM

28

-4

-3

A

-16

Power Dissipation

TA=25°C

PD

TA=70°C

2

W

0.8

Operating Temperature/ Storage Temperature

TJ,TSTG

-55 to 150

OC

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific board

design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

VER 1.1 1

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