STC722D データシートの表示（PDF） - Kodenshi Auk Co., LTD

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STC722D

NPN Silicon Transistor

Kodenshi Auk Co., LTD 

STC722D

NPN Silicon Transistor

Description

• General purpose amplifier

• Surface mount applications

Features

• PC(Collector dissipation)=15W

• Low speed switching applications

• Complementary pair with STA723D

Ordering Information

Type NO.

STC722D

Marking

STC722

PIN Connection

TO-252

Package Code

TO-252

Absolute maximum ratings

Characteristic

Symbol

Ratings

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

VCBO

40

VCEO

30

VEBO

5

IC

Collector current

ICP

Collector Power dissipation (Tc=25℃)

PC

Junction temperature

Tj

Storage temperature

Tstg

* : Single pulse, tp= 300 ㎲

3

6

15

150

-55~150

Electrical Characteristics

Characteristic

Symbol

Test Condition

Min.

Collector-Base breakdown voltage

BVCBO

IC=50μA, IE=0

40

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

30

Emitter-Base breakdown voltage

BVEBO

IC=50μA, IC=0

5

Collector cut-off current

ICBO

VCB=20V, IE=0

-

Emitter cut-off current

IEBO

VEB=4V, IC=0

-

DC current gain

hFE

VCE=3V, IC=500mA

80

VCE=3V, IC=3A

10

Collector-Emitter saturation voltage

VCE(sat)

VCE=2A, IC= 200mA

-

Transition frequency

fT

VCE=5V, IC=500mA,

f=1MHz

-

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

* : hFE rank / O : 80~218, Y : 120~270, G : 180~390

(Ta=25°C)

Unit

V

V

V

A(DC)

A(Pulse)

W

°C

°C

(Ta=25°C)

Typ. Max. Unit

-

-

V

-

-

V

-

-

V

-

1

μA

-

1

μA

-

390

-

-

-

0.5 0.8

V

120

-

MHz

13

-

pF

KSD-T6O019-001

1

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