MMBT8550D データシートの表示（PDF） - Bytes
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MMBT8550D Datasheet PDF : 3 Pages
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MMBT8550
o
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the NPN transistor
MMBT8050 is recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
SOT-23 Plastic Package
Value
Unit
40
V
25
V
6
V
600
mA
350
mW
150
OC
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 500 mA
Collector Base Cutoff Current
at -VCB = 35 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA
Symbol Min.
MMBT8550C hFE
100
MMBT8550D hFE
160
hFE
40
-ICBO
-
-V(BR)CBO
40
-V(BR)CEO
25
-V(BR)EBO
6
-VCE(sat)
-
-VBE(sat)
-
fT
-
Typ.
-
-
-
-
-
-
-
-
-
100
Max.
250
400
-
100
-
-
-
0.5
1.2
-
Unit
-
-
-
nA
V
V
V
V
V
MHz
http://www.bytesonic.com.tw/
Version 1.1
2018/7/3
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