MMBT8550LT1 データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

部品番号

コンポーネント説明

メーカー

MMBT8550LT1

PNP EPITAXIAL SILICON TRANSISTOR

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

MMBT8550LT1

Typical Characteristics

WEJ ELECTRONIC CO.,LTD -50

IB=300 A

IB=250 A

-40

IB=200 A

-30

IB=150 A

-20

IB=100 A

-10

IB=50 A

-0

0

-10

-20

-30

-40

-50

VCE(V),COLLECTOR-EMITTER VOLTAGE

Static Characteristic

1000

100

VcE=-1V

10

-10

-100

-1000

IC(mA),COLLECTOR CURRENT

DC Current Gain

-1000

VBE(sat)

-100

VCE(sat)

-10

-10

IC=10 IB

-100

-1000

IC(mA),COLLECTOR CURRENT

Bace-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

VcE=-6V

100

10

1

-1

-10

-100

-1000

-10000

IC[mA],COLLECTOR CURRENT

Current Gain Bandwidth Product

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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