IXBF20N360 データシートの表示（PDF） - IXYS CORPORATION

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IXBF20N360

High Voltage, High Frequency, BiMOSFET™ Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

Preliminary Technical Information

High Voltage,

High Frequency,

BiMOSFETTM Monolithic

Bipolar MOS Transistor

IXBF20N360

VCES =

IC110 =

VCE(sat) 

3600V

18A

3.4V

(Electrically Isolated Tab)

Symbol Test Conditions

Maximum Ratings

VCES

VCGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGE = 1M

3600

V

3600

V

VGES

VGEM

Continuous

Transient

± 20

V

± 30

V

IC25

TC = 25°C

IC110

TC = 110°C

ICM

TC = 25°C, 1ms

45

A

18

A

220

A

SSOA

VGE = 15V, TVJ = 125°C, RG = 10

ICM = 160

A

(RBSOA) Clamped Inductive Load

VCES  1500

V

TSC

VGE = 15V, TJ = 125°C,

(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive

10

μs

PC

TC = 25°C

230

W

TJ

-55 ... +150

°C

TJM

150

°C

Tstg

-55 ... +150

°C

TL

Maximum Lead Temperature for Soldering

300

°C

TSOLD

Plastic Body for 10s

260

°C

FC

Mounting Force with Clip

20..120 / 4.5..27

N/lb

VISOL

50/60Hz, 5 Seconds

4000

V~

Weight

8

g

ISOPLUS i4-PakTM

12

5

Isolated Tab

1 = Gate

2 = Emitter

5 = Collector

Features

 Silicon Chip on Direct-Copper Bond

(DCB) Substrate

 Isolated Mounting Surface

 4000V~ Electrical Isolation

 High Blocking Voltage

 High Frequency Operation

Advantages

 Low Gate Drive Requirement

 High Power Density

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

BVCES

VGE(th)

ICES

IGES

IC = 250μA, VGE = 0V

IC = 250μA, VCE = VGE

VCE

=

3000V,

VGE

=

0V

Note

2,

TJ

=

125°C

VCE = 0V, VGE = ± 20V

VCE(SAT)

IC = 20A, VGE = 15V, Note 1

TJ = 125°C

Characteristic Values

Min. Typ. Max.

3600

V

3.0

5.0 V

25 μA

125

μA

±200 nA

2.9

3.4 V

3.6

V

Applications

 Switch-Mode and Resonant-Mode

Power Supplies

 Uninterruptible Power Supplies

(UPS)

 Laser Generators

 Capacitor Discharge Circuits

 AC Switches

© 2013 IXYS CORPORATION, All Rights Reserved

DS100567A(12/13)

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