IXBF20N360 データシートの表示（PDF） - IXYS CORPORATION

部品番号

コンポーネント説明

メーカー

IXBF20N360

High Voltage, High Frequency, BiMOSFET™ Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

IXBF20N360

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

gfs

IC = 20A, VCE = 10V, Note 1

Cies

Coes

Cres

VCE = 25V, VGE = 0V, f = 1MHz

Qg(on)

Qge

Qgc

IC = 20A, VGE = 15V, VCE = 1000V

td(on)

tri

Inductive load, TJ = 25°C

Eon

IC = 20A, VGE = 15V

td(off)

VCE = 1500V, RG = 10

tfi

Note 3

Eoff

td(on)

tri

Inductive load, TJ = 125°C

Eon

IC = 20A, VGE = 15V

td(off)

VCE = 1500V, RG = 10

tfi

Note 3

Eoff

td(on)

tr

td(off)

tf

Resistive load, TJ = 25°C

IC = 20A, VGE = 15V

VCE = 960V, RG = 10

td(on)

tr

td(off)

tf

Resistive load, TJ = 125°C

IC = 20A, VGE = 15V

VCE = 960V, RG = 10

RthJC

RthCS

Characteristic Values

Min.

Typ. Max.

10

17

S

2045

pF

110

pF

50

pF

110

nC

13

nC

43

nC

18

ns

14

ns

15.50

mJ

238

ns

206

ns

4.30

mJ

20

ns

22

ns

16.10

mJ

247

ns

216

ns

4.15

mJ

30

ns

325

ns

165

ns

1045

ns

32

ns

890

ns

185

ns

1100

ns

0.54 °C/W

0.15

°C/W

ISOPLUS i4-PakTM (HV) Outline

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Reverse Diode

Symbol Test Conditions

(TJ = 25°C Unless Otherwise Specified)

VF

IF = 20A, VGE = 0V, Note 1

trr

IF = 10A, VGE = 0V, -diF/dt = 100A/μs

IRM

VR = 100V, VGE = 0V

QRM

Characteristic Values

Min. Typ. Max

3.5 V

1.7

μs

35

A

30

μC

PRELIMANARY TECHNICAL

INFORMATION

The product presented herein is under

development. The Technical Specifica-

tions offered are derived from a subjec-

tive evaluation of the design, based upon

prior knowledge and experience, and

constitute a "considered reflection" of the

anticipated result. IXYS reserves the

right to change limits, test conditions, and

dimensions without notice.

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

3. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344 6,727,585 7,005,734 B2 7,157,338B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

Share Link: