DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IXBT42N300HV データシートの表示(PDF) - IXYS CORPORATION

部品番号
コンポーネント説明
メーカー
IXBT42N300HV Datasheet PDF : 6 Pages
1 2 3 4 5 6
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
650
RG = 20, VGE = 15V
600
VCE = 1500V
550
500
450
I C = 84A
400
I C = 42A
350
300
250
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
1800
360
1600
tr
t d(on) - - - -
320
TJ = 125ºC, VGE = 15V
1400
VCE = 1500V
280
1200
I C = 84A
240
1000
200
800
160
I C = 42A
600
120
400
80
200
40
20
40
60
80
100 120 140 160 180
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
800
500
tf
t d(off) - - - -
700
RG = 20, VGE = 15V
480
VCE = 1500V
600
460
TJ = 25ºC
500
440
400
420
TJ = 125ºC
300
400
200
380
40
45
50
55
60
65
70
75
80
85
IC - Amperes
IXBT42N300HV
IXBH42N300HV
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
650
600
550
TJ = 125ºC
500
RG = 20, VGE = 15V
VCE = 1500V
450
400
TJ = 25ºC
350
300
250
40
45
50
55
60
65
70
75
80
85
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
800
500
tf
t d(off) - - - -
700
RG = 20, VGE = 15V
480
VCE = 1500V
600
460
I C = 42A
500
440
400
420
300
I C = 84A
400
200
380
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1100
3600
1000
900
800
700
tf
t d(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 1500V
I C = 42A
3200
2800
2400
2000
600
1600
500
1200
400
800
I C = 84A
300
400
200
0
20
40
60
80
100 120 140 160 180
RG - Ohms
© 2014 IXYS CORPORATION, All Rights Reserved

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]